advanced power n-channel enhancement mode electronics corp. power mosfet capable of 2.5v gate drive bv dss 20v lower on-resistance r ds(on) 35m surface mount package i d 5.3a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice halogen-free product 1 AP2306GN-HF parameter rating drain-source voltage 20 gate-source voltage + 12 continuous drain current 3 , v gs @ 4.5v 5.3 operating junction temperature range -55 to 150 continuous drain current 3 , v gs @ 4.5v 4.3 pulsed drain current 1 10 storage temperature range total power dissipation 1.38 -55 to 150 200902044 thermal data parameter g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for all commercial-industrial applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5.5a - - 30 m ? ? ? ?
AP2306GN-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c v g =2.5v 4.0v 5.0v 4.5v 0 10 20 30 40 50 012345678 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 4.0v v g =2.5v 4.5v 5.0v 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =4.5v i d =5.3a 20 40 60 80 100 1357911 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5.3a t a =25 o c
AP2306GN-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time circuit fig 12. gate charge circuit 4 0 2 4 6 8 10 12 14 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =10v i d =5.3a 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 270 : /w 0.75x rated v to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.5 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 ma
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